MUR320SHM6G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation's MUR320SHM6G is a fast-recovery, general-purpose diode designed for demanding applications. With a maximum repetitive peak reverse voltage of 200 V and a continuous average rectified forward current of 3 A, this component features a low forward voltage drop of 875 mV at 3 A. The reverse leakage current is a mere 5 µA at its rated 200 V. Engineered for reliability, it operates across a wide junction temperature range of -55°C to 175°C and boasts a reverse recovery time of 25 ns. The device is housed in a DO-214AB (SMC) surface-mount package, supplied on tape and reel. Its AEC-Q101 qualification signifies its suitability for automotive and industrial environments where robust performance is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
