MUR315S V7G
DIODE GEN PURP 150V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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The Taiwan Semiconductor Corporation MUR315S-V7G is a general-purpose, fast-recovery diode designed for demanding applications. This component features a maximum DC reverse voltage of 150V and an average rectified current handling capability of 3A. With a low reverse leakage current of 5 µA at its rated reverse voltage, it ensures efficient operation. The MUR315S-V7G is housed in a DO-214AB (SMC) surface-mount package, facilitating high-density circuit board designs. Its operating junction temperature range of -55°C to 175°C makes it suitable for harsh environments. The diode's fast recovery characteristic, with a typical reverse recovery time of 25 ns, is crucial for high-frequency power switching applications found in power supplies, automotive electronics, and industrial control systems. The device is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
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