MUR315S M6G
DIODE GEN PURP 150V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation MUR315S-M6G is a fast recovery general-purpose diode. This component features a 150V reverse voltage rating and a 3A average rectified current capability. The forward voltage drop is a maximum of 875mV at 3A, with a reverse leakage of 5µA at 150V. The reverse recovery time (trr) is specified at 25ns, indicating its suitability for applications requiring efficient switching. This device utilizes a standard technology and is housed in a DO-214AB (SMC) surface mount package, supplied on tape and reel. It is designed for operation across a junction temperature range of -55°C to 175°C. This diode finds application in power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
