LL4007G L0
DIODE GEN PURP 1A MELFManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's LL4007G-L0 is a general-purpose diode with a 1A average rectified current (Io) and a maximum DC reverse voltage (Vr) of 1000V. This DO-213AB, MELF packaged device offers a standard recovery time exceeding 500ns for Io > 200mA. It features a forward voltage (Vf) of 1.1V at 1A and a low reverse leakage current of 5µA at 1000V. The device's capacitance is 15pF @ 4V, 1MHz. Designed for surface mount applications, it operates within a junction temperature range of -65°C to 150°C and is supplied in Tape & Reel packaging. This component is suitable for various applications, including power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-213AB, MELF |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
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