LL4006G L0
DIODE GEN PURP 800V 1A MELFManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's LL4006G-L0 is a general-purpose diode designed for robust performance in demanding applications. This MELF package diode features a maximum DC reverse voltage (Vr) of 800 V and a continuous average rectified forward current (Io) of 1 A. With a standard recovery time exceeding 500 ns, it is suitable for power supply rectification and general switching circuits. The forward voltage (Vf) is rated at a maximum of 1.1 V at 1 A, and the reverse leakage current at 800 V is a low 5 µA. Its operating junction temperature range spans from -65°C to 150°C, making it a reliable choice for industrial, automotive, and consumer electronics sectors. The LL4006G-L0 is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-213AB, MELF |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
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