HT17G-K
75NS, 1A, 800V, HIGH EFFICIENT RManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation's fast recovery diode, part number HT17G-K, offers a robust 800V reverse voltage capability with a 1A average rectified current. This through-hole component, housed in a TS-1 axial package, features a typical reverse recovery time of 75 ns, making it suitable for high-frequency rectification applications. Its low leakage current of 5 µA at 800V and a forward voltage drop of 1.7V at 1A contribute to its high efficiency. The capacitance at 4V and 1MHz is rated at 10pF. Operating across a junction temperature range of -55°C to 150°C, this diode is commonly utilized in power supply units, automotive electronics, and industrial control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Qualification | - |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
