HT17G A1G
DIODE GEN PURP 800V 1A TS-1Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation HT17G-A1G is an 800V, 1A general-purpose diode, housed in a TS-1 axial package. This through-hole component features a maximum forward voltage (Vf) of 1.7V at 1A and a reverse leakage current of 5 µA at its maximum repetitive peak reverse voltage (Vr) of 800V. With a reverse recovery time (trr) of 75 ns, it is classified as a fast recovery diode, suitable for applications requiring switching speeds up to 500ns. The diode exhibits a junction capacitance of 10pF at 4V and 1MHz. Its operating junction temperature range is -55°C to 150°C. This component is commonly utilized in power supply circuits, rectification, and general-purpose switching applications across various industrial and consumer electronics sectors. The HT17G-A1G is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
SK82CHR7G
DIODE SCHOTTKY 20V 8A DO214AB
