HT16G A1G
DIODE GEN PURP 600V 1A TS-1Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HT16G-A1G is a general-purpose diode designed for demanding applications. This through-hole component, housed in a TS-1 axial package, offers a maximum DC reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 1 A. Key performance characteristics include a forward voltage (Vf) of 1.7 V at 1 A and a reverse leakage current of 5 µA at 600 V. The device features a reverse recovery time (trr) of 75 ns, classifying it as a fast recovery diode. With an operating junction temperature range of -55°C to 150°C, the HT16G-A1G is suitable for use in power supply rectification, general switching, and high-voltage applications across various industrial sectors. It is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
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