HT13G A1G
DIODE GEN PURP 200V 1A TS-1Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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The Taiwan Semiconductor Corporation HT13G-A1G is a general-purpose diode designed for efficient rectification and switching applications. This component features a maximum DC reverse voltage of 200V and an average rectified forward current of 1A. With a forward voltage of 1V maximum at 1A, it offers low power dissipation. The diode exhibits a reverse leakage current of 5 µA at 200V and a reverse recovery time of 50ns, classifying it within the fast recovery speed category. The device is housed in a TS-1 axial package, suitable for through-hole mounting. Its operating junction temperature range is -55°C to 150°C. Typical applications include power supplies, switching circuits, and general rectification in industrial and consumer electronics. The HT13G-A1G is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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