HS5M R7G
DIODE GEN PURP 1KV 5A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS5M-R7G is a general-purpose diode designed for demanding applications. This component features a 1000V reverse voltage rating and a 5A average rectified current capability. With a forward voltage drop of 1.7V at 5A, it offers efficient power handling. The HS5M-R7G utilizes standard technology and is specified as a fast recovery diode with a reverse recovery time (trr) of 75 ns. Its surface mountable DO-214AB (SMC) package ensures suitability for high-density board designs. Operating across a junction temperature range of -55°C to 150°C, this diode is commonly found in power supply rectification, motor control, and lighting applications. The device exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
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