HS5M M6G
DIODE GEN PURP 5A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation HS5M-M6G is a general-purpose diode with a 1000V reverse voltage rating and a 5A average rectified current capability. This surface-mount component, housed in a DO-214AB (SMC) package, offers a fast recovery time of 75 ns. Its forward voltage drop is specified at 1.7V maximum at 5A, with a low reverse leakage current of 10 µA at its maximum reverse voltage. The device operates across a junction temperature range of -55°C to 150°C and features a capacitance of 50pF at 4V and 1MHz. This component is commonly utilized in power supply rectification, general switching applications, and protection circuits across various industrial and consumer electronics sectors. The HS5M-M6G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
