HS5J M6G
DIODE GEN PURP 600V 5A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's HS5J-M6G is a general-purpose diode designed for demanding applications. This device features a 600V reverse voltage rating and a 5A average rectified forward current capability. Engineered with a fast recovery time of 75 ns, it is suitable for power switching and rectification circuits. The forward voltage drop is specified at a maximum of 1.7V at 5A. Operating over a junction temperature range of -55°C to 150°C, the HS5J-M6G exhibits a low reverse leakage current of 10 µA at 600V and a capacitance of 50pF at 4V and 1MHz. This component is housed in a DO-214AB (SMC) package, facilitating surface mounting. Its robust specifications make it a valuable component in power supply units, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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