HS5A V6G
DIODE GEN PURP 50V 5A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS5A-V6G is a general-purpose diode designed for applications requiring efficient rectification. This component features a maximum DC reverse voltage (Vr) of 50 V and an average rectified forward current (Io) of 5 A. The diode exhibits a low reverse leakage current of 10 µA at 50 V and a typical reverse recovery time (trr) of 50 ns, classifying it as a fast recovery diode. Its capacitance at 4V and 1MHz is 80 pF. The HS5A-V6G is housed in a DO-214AB (SMC) surface-mount package, suitable for automated assembly processes. Operating junction temperatures range from -55°C to 150°C. This diode is commonly utilized in power supplies, switching circuits, and general rectification tasks across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
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