HS3M R6G
DIODE GEN PURP 1KV 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS3M-R6G is a general-purpose diode with a maximum repetitive reverse voltage of 1000V and an average rectified forward current of 3A. This device features a forward voltage drop of 1.7V at 3A and a reverse leakage current of 10 µA at 1000V. The HS3M-R6G is designed with a fast recovery time of 75 ns, categorized as Fast Recovery =< 500ns, > 200mA (Io). It is housed in a DO-214AB (SMC) surface-mount package and operates within a temperature range of -55°C to 150°C. Typical applications include power supply rectification and general switching applications across various industrial sectors. Capacitance is rated at 50pF @ 4V, 1MHz. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
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