HS3J R7G
DIODE GEN PURP 600V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS3J-R7G is a general-purpose diode designed for demanding applications. This device features a repetitive peak reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 3 A. The HS3J-R7G offers a forward voltage drop (Vf) of 1.7 V at 3 A and a reverse leakage current of 10 µA at 600 V. With a fast recovery time (trr) of 75 ns, it is suitable for applications requiring efficient switching. The diode's low capacitance of 50 pF at 4 V and 1 MHz contributes to its performance in high-frequency circuits. Packaged in a DO-214AB (SMC) surface-mount configuration, it operates across a junction temperature range of -55°C to 150°C. This component is commonly utilized in power supply rectification, switching power supplies, and general electronic circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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