HS3F M6G
DIODE GEN PURP 300V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS3F-M6G is a general-purpose, fast recovery diode with a maximum repetitive reverse voltage of 300V. This surface mount component, packaged in a DO-214AB (SMC) case, offers an average rectified forward current of 3A. Its forward voltage drop is rated at a maximum of 1V at 3A. The device exhibits a low reverse leakage current of 10 µA at 300V and a reverse recovery time of 50 ns, indicative of its fast switching characteristics. The junction operating temperature range is -55°C to 150°C. This diode is commonly utilized in power supply circuits, switching power supplies, and general rectification applications across various industrial and consumer electronics. The HS3F-M6G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 300 V |
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