HS3AB M4G
DIODE GEN PURP 50V 3A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's HS3AB-M4G is a general-purpose diode designed for efficient rectification. This component features a 50V reverse voltage (Vr) rating and a 3A average rectified current (Io) capability. The forward voltage (Vf) is a maximum of 1V at 3A, and it exhibits a reverse leakage current of 10 µA at 50V. With a capacitance of 80pF at 4V and 1MHz, and a reverse recovery time (trr) of 50 ns, this diode is classified as fast recovery, suitable for applications requiring switching speeds up to 500ns. The HS3AB-M4G is housed in a DO-214AA (SMB) surface mount package, supplied on tape and reel. Its operating junction temperature range is -55°C to 150°C. This diode is commonly utilized in power supply circuits, switching power supplies, and general rectification applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 80pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
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