HS2B M4G
DIODE GEN PURP 100V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's HS2B-M4G is a general-purpose diode with a maximum repetitive reverse voltage (Vr) of 100V. This device features a forward voltage (Vf) of 1V at 2A and an average rectified forward current (Io) of 2A. Designed for surface mounting, it is housed in a DO-214AA (SMB) package. The diode exhibits a reverse leakage current of 5 µA at 100V and a typical capacitance of 50pF at 4V and 1MHz. With a reverse recovery time (trr) of 50 ns, it is classified as a fast recovery diode. Operating junction temperatures range from -55°C to 150°C. This component is commonly utilized in power supply circuits, switching applications, and general rectification within the automotive and industrial electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 2 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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