HS1JL R3G
DIODE GEN PURP 600V 1A SUB SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS1JL-R3G is a general-purpose diode designed for demanding applications. This Sub SMA packaged component offers a 600V reverse voltage rating and a 1A average rectified current capability. Featuring a fast recovery time of 75 ns, it exhibits excellent performance characteristics for switching applications. The forward voltage drop is a maximum of 1.7V at 1A, with a low reverse leakage current of 5 µA at 600V. The component's capacitance at 4V and 1MHz is 15pF. Operating within a junction temperature range of -55°C to 150°C, the HS1JL-R3G is suitable for surface mount integration in power supply, automotive, and industrial control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
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