HS1F R3G
DIODE GEN PURP 300V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation HS1F-R3G is a general-purpose diode featuring a 300V reverse voltage (Vr) and 1A average forward current (Io). This surface mount component, packaged in a DO-214AC (SMA) case, exhibits a forward voltage (Vf) of 1V at 1A. With a reverse leakage current of 5 µA at 300V and a typical capacitance of 20pF @ 4V, 1MHz, it is categorized as a fast recovery diode with a reverse recovery time (trr) of 50 ns. The operating junction temperature range is -55°C to 150°C. This component is commonly utilized in power supply rectification, switching applications, and general-purpose signal processing across various industrial and consumer electronics sectors. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 300 V |
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