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HERAF804G C0G

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HERAF804G C0G

DIODE GEN PURP 300V 8A ITO220AC

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation HERAF804G-C0G is a general-purpose diode with a maximum DC reverse voltage (Vr) of 300 V and an average rectified forward current (Io) of 8 A. This component features a fast recovery time (trr) of 50 ns, suitable for applications requiring speeds less than 500 ns. The forward voltage (Vf) is a maximum of 1 V at 8 A. The diode exhibits a reverse leakage current of 10 µA at 300 V and a capacitance of 80 pF at 4V, 1MHz. It is housed in an ITO-220AC package with a through-hole mounting type. The operating junction temperature range is -55°C to 150°C. This device is commonly utilized in power supply rectification and general switching applications across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2 Full Pack
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50 ns
TechnologyStandard
Capacitance @ Vr, F80pF @ 4V, 1MHz
Current - Average Rectified (Io)8A
Supplier Device PackageITO-220AC
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)300 V
Voltage - Forward (Vf) (Max) @ If1 V @ 8 A
Current - Reverse Leakage @ Vr10 µA @ 300 V

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