GPAS1001 MNG
DIODE GEN PURP 50V 10A TO263ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's GPAS1001-MNG is a general-purpose diode featuring a 50V reverse voltage rating and a 10A average rectified forward current. This surface mount component, packaged in a TO-263AB (D2PAK) configuration, exhibits a forward voltage drop of 1.1V at 10A and a reverse leakage current of 5µA at 50V. Its standard recovery speed exceeds 500ns for currents above 200mA. The operating junction temperature range is -55°C to 150°C. This diode is suitable for power supply rectification and general-purpose switching applications across various industrial sectors. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 50pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
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