F1T5G-K
250NS, 1A, 600V, FAST RECOVERY RManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation F1T5G-K is a fast recovery diode designed for power rectification applications. This through-hole component offers a repetitive peak reverse voltage of 600V and a continuous average forward current of 1A. The F1T5G-K features a reverse recovery time (trr) of 250 ns, characteristic of its fast recovery speed for currents greater than 200mA. Its forward voltage drop (Vf) is a maximum of 1.3V at 1A. The leakage current at its maximum reverse voltage is 5 µA at 600V. Operating across a junction temperature range of -55°C to 150°C, this diode is housed in a TS-1 axial package, supplied on tape and reel. Its capacitance is 15pF at 4V and 1MHz. This device finds utility in power supply circuits, switching power supplies, and general-purpose rectification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 99 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Qualification | - |
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