F1T3GHR0G
DIODE GEN PURP 200V 1A TS-1Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation F1T3GHR0G is a general-purpose diode designed for demanding applications. This component features a maximum DC reverse voltage (Vr) of 200 V and an average rectified forward current (Io) of 1 A. With a forward voltage (Vf) of 1.3 V at 1 A, it offers efficient rectification. The diode exhibits a low reverse leakage current of 5 µA at 200 V and a capacitance of 15 pF at 4 V and 1 MHz. Qualified to AEC-Q101 and featuring a fast recovery time (trr) of 150 ns, this component is suitable for high-volume manufacturing, supplied in Tape & Reel (TR) packaging. The axial, T-18 package facilitates through-hole mounting. Its specifications make it appropriate for use in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | AEC-Q101 |
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