F1T3G R0G
DIODE GEN PURP 200V 1A TS-1Manufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's F1T3G-R0G is a general-purpose diode designed for demanding applications. This through-hole component, housed in a TS-1 axial package, features a maximum DC reverse voltage of 200V and a rectified average forward current of 1A. With a forward voltage drop of 1.3V at 1A and a reverse leakage current of only 5 µA at 200V, it offers efficient rectification. The diode exhibits a fast recovery time of 150 ns and a capacitance of 15pF at 4V and 1MHz. Operating across a wide temperature range from -55°C to 150°C, this Taiwan Semiconductor Corporation diode is suitable for industrial, automotive, and power supply applications. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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