F1T3G-K
150NS, 1A, 200V, FAST RECOVERY RManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation F1T3G-K is a fast recovery diode with a maximum reverse voltage of 200V and an average rectified current of 1A. This through-hole component features a reverse recovery time (trr) of 150 ns, indicating its suitability for high-frequency rectification applications. The forward voltage drop is a maximum of 1.3V at 1A. The device exhibits a low reverse leakage current of 5 µA at 200V and has a junction capacitance of 15pF at 4V and 1MHz. Packaged in a TS-1 axial case, this diode is supplied on tape and reel. It operates within a temperature range of -55°C to 150°C and finds application in power supplies, switching regulators, and general-purpose rectification where efficient high-speed switching is required.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Qualification | - |
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