F1T1G-K
150NS, 1A, 50V, FAST RECOVERY REManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's F1T1G-K is a fast recovery diode. This through-hole component, housed in a TS-1 axial package, features a maximum DC reverse voltage of 50V and an average rectified current of 1A. Its reverse recovery time (trr) is rated at 150 ns, with a forward voltage (Vf) of 1.3V at 1A. The diode exhibits a low reverse leakage current of 5 µA at 50V and a capacitance of 15pF at 4V, 1MHz. Operating across a junction temperature range of -55°C to 150°C, this device is suitable for applications in power supplies and general rectification within industrial and consumer electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | T-18, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TS-1 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
| Qualification | - |
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