ESH3D V7G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH3D-V7G is a general-purpose diode engineered for high-performance applications. This surface-mount component, housed in a DO-214AB (SMC) package, offers a DC reverse voltage rating of 200V and an average rectified current capability of 3A. Its fast recovery time of 20 ns, coupled with a reverse leakage of only 5 µA at 200V, makes it suitable for power supply rectification, switching power applications, and general-purpose switching. The diode's low junction capacitance of 45pF @ 4V, 1MHz further contributes to its efficiency in high-frequency circuits. Operating across a wide temperature range of -55°C to 175°C, the ESH3D-V7G is a robust solution for demanding industrial and automotive environments. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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