ESH3D R7G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH3D-R7G is a general-purpose diode with a 200V reverse voltage rating and a 3A average rectified forward current. This fast recovery diode, featuring a reverse recovery time of 20 ns, is housed in a DO-214AB (SMC) surface-mount package. Key electrical characteristics include a forward voltage of 900 mV at 3A and a low reverse leakage current of 5 µA at 200V. The junction capacitance is specified as 45pF at 4V and 1MHz. Operating within a junction temperature range of -55°C to 175°C, this component is supplied on tape and reel. It finds application in power supply circuits, switching power supplies, and general rectification tasks across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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