ESH3B V7G
DIODE GEN PURP 100V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH3B-V7G is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a DO-214AB (SMC) package, offers a maximum repetitive reverse voltage of 100 V and a continuous average rectified forward current of 3 A. It features a fast recovery time of 20 ns, suitable for applications requiring efficient switching. Typical junction capacitance is 45 pF at 4 V and 1 MHz, with a low reverse leakage current of 5 µA at its maximum reverse voltage. The operating junction temperature range is -55°C to 175°C. This component is commonly employed in power supply circuits, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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