ESH2DA R3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH2DA-R3G is a general-purpose diode featuring a 200V reverse voltage and a 1A average rectified current. This surface-mount component, housed in a DO-214AC (SMA) package, offers a fast recovery time of 25 ns. It exhibits a forward voltage of 900 mV at 1A and a low reverse leakage current of 1 µA at its maximum reverse voltage of 200V. The device operates across a wide temperature range of -55°C to 175°C. With a capacitance of 25pF at 4V and 1MHz, the ESH2DA-R3G is suitable for applications in automotive, industrial, and telecommunications sectors. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
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