ESH2BA R3G
DIODE GEN PURP 100V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH2BA-R3G is a general-purpose diode with a 100V reverse voltage rating and 1A average rectified current capability. This surface-mount device, housed in a DO-214AC (SMA) package, offers a fast reverse recovery time of 25 ns. Key specifications include a maximum forward voltage of 900mV at 1A and a low reverse leakage of 1 µA at 200V. The capacitance at 4V and 1MHz is 25pF. Operating across a junction temperature range of -55°C to 175°C, this component is suitable for applications in power supplies, consumer electronics, and automotive systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
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