ESH2B R5G
DIODE GEN PURP 100V 2A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH2B-R5G is a fast recovery general-purpose diode featuring a 100V reverse voltage rating and a 2A average rectified forward current. This component is housed in a DO-214AA (SMB) surface mount package. Its low 2 µA reverse leakage at 100V and 900mV forward voltage drop at 2A are critical parameters for efficient operation. With a reverse recovery time of 20 ns and a junction operating temperature range of -55°C to 175°C, the ESH2B-R5G is suitable for high-frequency applications. The capacitance at 4V and 1MHz is specified at 25pF. This device is commonly utilized in power supply rectification, switching power supplies, and general-purpose rectification across various industrial and consumer electronics sectors. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
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