ESH1JMHRSG
DIODE GEN PURP 600V 1A MICRO SMAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation ESH1JMHRSG is a general-purpose diode designed for high-voltage applications. This fast-recovery rectifier features a maximum reverse voltage of 600V and an average rectified forward current capability of 1A. The ESH1JMHRSG exhibits a typical forward voltage drop of 1.5V at 1A and a low reverse leakage current of 1 µA at 600V. Its capacitance at 4V and 1MHz is rated at 3pF. The device operates across a junction temperature range of -55°C to 150°C and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Packaged in a Micro SMA (2-SMD, Flat Leads) for surface mounting and supplied on tape and reel, this component is utilized in power supply rectification and general switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 3pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Micro SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
