ESH1D R3G
DIODE GEN PURP 200V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH1D-R3G is a general-purpose diode designed for efficient rectification. This device features a 200V reverse voltage rating (Vr) and a 1A average rectified forward current (Io). With a fast recovery time (trr) of 15 ns, it is suitable for applications requiring rapid switching. The forward voltage drop (Vf) is a maximum of 900 mV at 1A. Leakage current at the maximum reverse voltage is a low 1 µA @ 200 V, with a junction capacitance of 16pF @ 4V, 1MHz. The ESH1D-R3G is housed in a compact DO-214AC (SMA) surface-mount package, ideal for high-density circuit boards. Its operating temperature range spans from -55°C to 175°C. This component is commonly utilized in power supplies, switching circuits, and general-purpose rectification across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
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