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ESH1C R3G

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ESH1C R3G

DIODE GEN PURP 150V 1A DO214AC

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

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Taiwan Semiconductor Corporation ESH1C-R3G is a general-purpose diode featuring a 150V reverse voltage rating and a 1A average rectified current capacity. This surface-mount component, housed in a DO-214AC (SMA) package, operates across a wide temperature range of -55°C to 175°C. The ESH1C-R3G exhibits a forward voltage drop of 950mV at 1A and a reverse leakage of 1 µA at its maximum reverse voltage. Its fast recovery time of 15 ns makes it suitable for applications requiring efficient switching. This diode is commonly utilized in power supplies, voltage clamping circuits, and general rectification applications across various industrial and consumer electronics sectors. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AC, SMA
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)15 ns
TechnologyStandard
Capacitance @ Vr, F16pF @ 4V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 1 A
Current - Reverse Leakage @ Vr1 µA @ 150 V

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