ESH1B R3G
DIODE GEN PURP 100V 1A DO214ACManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ESH1B-R3G is a general-purpose diode designed for efficient rectification. This DO-214AC (SMA) packaged device offers a repetitive peak reverse voltage of 100V and a continuous average rectified forward current of 1A. Featuring a fast recovery time of 15 ns, it is suitable for applications requiring rapid switching. The forward voltage drop is a maximum of 900mV at 1A, and the reverse leakage current is a low 1 µA at 100V. Its capacitance is rated at 16pF @ 4V, 1MHz. With an operating junction temperature range of -55°C to 175°C, the ESH1B-R3G is a robust component for power supply circuits, switching power supplies, and general rectification in industrial and consumer electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
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