ES3J R6
DIODE GEN PURP 600V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES3J-R6 is a general-purpose diode designed for demanding applications. This fast-recovery diode offers a repetitive peak reverse voltage (Vrrm) of 600V and a continuous average rectified forward current (Io) of 3A. It features a low forward voltage drop (Vf) of 1.7V at 3A and a reverse leakage current (Ir) of only 10 µA at 600V. The reverse recovery time (trr) is rated at 35 ns, ensuring efficient switching performance. The ES3J-R6 is housed in a compact DO-214AB (SMC) surface-mount package, suitable for high-density board designs. Its operating junction temperature range is -55°C to 150°C. This component is commonly utilized in power supplies, switching regulators, and general rectification circuits across various industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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