ES3J M6G
DIODE GEN PURP 600V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation ES3J-M6G is a general-purpose diode designed for high-voltage applications. This device features a 600V reverse voltage (Vr) and a 3A average rectified forward current (Io). With a forward voltage (Vf) of 1.7V at 3A, it offers efficient rectification. The ES3J-M6G exhibits a reverse leakage current of 10 µA at 600V and a typical capacitance of 30pF at 4V and 1MHz. Its fast recovery time (trr) of 35 ns classifies it as a fast recovery diode, suitable for switching applications. The component is housed in a DO-214AB (SMC) surface-mount package and operates across a junction temperature range of -55°C to 150°C. This diode is commonly utilized in power supplies, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
