ES3HBHR5G
DIODE GEN PURP 500V 3A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation ES3HBHR5G is a general-purpose rectifying diode with a repetitive peak reverse voltage of 500 V and an average rectified forward current of 3 A. This surface mount device, housed in a DO-214AA (SMB) package, features a forward voltage of 1.7 V at 3 A and a reverse leakage current of 10 µA at 500 V. With a reverse recovery time of 35 ns, it is classified as a fast recovery diode. The component’s capacitance at 4 V and 1 MHz is 30 pF. This device is AEC-Q101 qualified, making it suitable for automotive applications. It operates across a junction temperature range of -55°C to 150°C and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 500 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
TST20U60C
DIODE SCHOTTKY 60V 10A TO220AB
S4M M6G
DIODE GEN PURP 4A DO214AB
UG12JH
20NS, 12A, 600V, ULTRA FAST RECO
