ES3HBHM4G
DIODE GEN PURP 500V 3A DO214AAManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
Quality Control: Learn More
Taiwan Semiconductor Corporation ES3HBHM4G is a general-purpose diode with a maximum reverse voltage of 500 V and an average rectified current of 3 A. This surface mount device features a DO-214AA (SMB) package and is qualified to AEC-Q101 standards, indicating its suitability for automotive applications. The diode exhibits a typical forward voltage (Vf) of 1.7 V at 3 A and a reverse leakage current of 10 µA at 500 V. Its reverse recovery time (trr) is specified at 35 ns, classifying it as a fast recovery diode. The junction operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply circuits, automotive electronics, and industrial control systems where efficient rectification and fast switching are required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AA, SMB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 500 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
HS1DL M2G
DIODE GEN PURP 200V 1A SUB SMA
SR303 R0G
DIODE SCHOTTKY 30V 3A DO201AD
SS14L M2G
DIODE SCHOTTKY 40V 1A SUB SMA
