ES3H R6G
DIODE GEN PURP 500V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES3H-R6G is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a DO-214AB (SMC) package, features a maximum DC reverse voltage of 500 V and an average rectified forward current capability of 3 A. The forward voltage drop is rated at a maximum of 1.7 V at 3 A. With a reverse leakage of 10 µA at 500 V and a capacitance of 30 pF at 4V and 1MHz, this diode operates efficiently across a junction temperature range of -55°C to 150°C. Its fast recovery time of 35 ns makes it suitable for use in power supply circuits, automotive electronics, and industrial control systems. The ES3H-R6G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 500 V |
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