ES3F R7G
DIODE GEN PURP 300V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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The Taiwan Semiconductor Corporation ES3F-R7G is a general-purpose diode designed for high-efficiency rectification applications. This component features a 300V reverse voltage rating and a 3A average forward current capability. It utilizes a fast recovery speed with a typical reverse recovery time (trr) of 35 ns for currents greater than 200mA. The forward voltage drop is a maximum of 1.3V at 3A. With a low reverse leakage current of 10 µA at 300V and a junction capacitance of 30pF at 4V and 1MHz, it is suitable for demanding power supply designs and switching applications. The device is housed in a DO-214AB (SMC) surface mount package, supplied on tape and reel. Its operating temperature range is -55°C to 150°C. This component finds application in various industrial sectors including power management, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 300 V |
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