ES3DVHM6G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES3DVHM6G is a general-purpose diode with a 200V reverse voltage rating and an average forward current of 3A. This surface-mount component, housed in a DO-214AB (SMC) package, features a maximum forward voltage of 900mV at 3A and a typical junction capacitance of 45pF at 4V and 1MHz. The device exhibits a reverse leakage current of 10 µA at 200V and a reverse recovery time of 20 ns, classifying it as a fast recovery diode. Engineered for demanding applications, the ES3DVHM6G meets AEC-Q101 qualification and is suitable for automotive environments. It operates across a junction temperature range of -55°C to 150°C. This component is commonly utilized in automotive power management and signal rectification circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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