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ES3DV R7G

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ES3DV R7G

DIODE GEN PURP 200V 3A DO214AB

Manufacturer: Taiwan Semiconductor Corporation

Categories: Single Diodes

Quality Control: Learn More

Taiwan Semiconductor Corporation ES3DV-R7G is a general-purpose, fast recovery diode with a maximum repetitive peak reverse voltage of 200V and an average rectified forward current of 3A. This surface mount component, housed in a DO-214AB (SMC) package, features a forward voltage drop of 900mV at 3A and a reverse leakage current of 10 µA at 200V. Its reverse recovery time is specified at 20 ns. The operating junction temperature range is -55°C to 150°C. Typical applications include power supply rectification, switching power supplies, and general industrial applications. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDO-214AB, SMC
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20 ns
TechnologyStandard
Capacitance @ Vr, F45pF @ 4V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If900 mV @ 3 A
Current - Reverse Leakage @ Vr10 µA @ 200 V

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