ES3DV M6G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES3DV-M6G is a general-purpose diode with a 200V reverse voltage rating and a 3A average rectified current capacity. This fast recovery diode, characterized by a reverse recovery time (trr) of 20 ns, is housed in a DO-214AB (SMC) surface-mount package. It exhibits a forward voltage (Vf) of 900 mV at 3A and a low reverse leakage current of 10 µA at its maximum reverse voltage of 200V. The component's capacitance is rated at 45pF at 4V and 1MHz. The ES3DV-M6G is suitable for applications in power supply rectification and general-purpose switching where efficient diode performance is critical. The device is supplied in Tape & Reel (TR) packaging and operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 20 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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