ES3DHM6G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES3DHM6G is a general-purpose diode offering a 200V reverse voltage and a 3A average rectified current. This surface-mount component, housed in a DO-214AB (SMC) package, features a fast recovery time of 35 ns, suitable for applications requiring speeds less than 500ns for currents exceeding 200mA. With a forward voltage of 950mV at 3A and a reverse leakage of 10µA at 200V, it exhibits a capacitance of 45pF at 4V and 1MHz. The ES3DHM6G is AEC-Q101 qualified and operates across a junction temperature range of -55°C to 150°C, making it well-suited for automotive applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Qualification | AEC-Q101 |
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