ES3D R6
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES3D-R6 is a general-purpose diode with a 200V reverse voltage rating and a 3A average rectified current (Io). The device features a fast recovery time of 35ns, characteristic of its fast switching speed. Its forward voltage drop (Vf) is a maximum of 950mV at 3A, and it exhibits a low reverse leakage current of 10 µA at its maximum reverse voltage of 200V. The diode has a junction capacitance of 45pF at 4V and 1MHz. This component is housed in a DO-214AB (SMC) surface-mount package, supplied on tape and reel. The ES3D-R6 is suitable for applications requiring efficient rectification and switching, commonly found in power supplies, industrial controls, and automotive electronics. It operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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