ES3D M6G
DIODE GEN PURP 200V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation ES3D-M6G is a general-purpose, surface-mount diode in a DO-214AB (SMC) package. This device offers a maximum DC reverse voltage of 200 V and an average rectified forward current of 3 A. The forward voltage drop is specified at 950 mV maximum at 3 A. Reverse leakage current is a low 10 µA at 200 V. Featuring a fast recovery time of 35 ns, this diode is suitable for applications requiring efficient rectification. Its capacitance is 45 pF at 4 V and 1 MHz. The ES3D-M6G operates across a junction temperature range of -55°C to 150°C and is supplied on tape and reel. This component is utilized in power supplies, general rectification, and switching applications within the automotive and industrial electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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