ES3BHR7G
DIODE GEN PURP 100V 3A DO214ABManufacturer: Taiwan Semiconductor Corporation
Categories: Single Diodes
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Taiwan Semiconductor Corporation's ES3BHR7G is a general-purpose diode designed for demanding applications. This AEC-Q101 qualified component features a 100V reverse voltage and a 3A average rectified current (Io). Its fast recovery time of 35 ns (trr) makes it suitable for high-frequency switching. The ES3BHR7G exhibits a low forward voltage drop of 950mV at 3A and a reverse leakage of just 10 µA at 100V. With a junction operating temperature range of -55°C to 150°C, this diode is ideal for automotive and industrial sectors. The DO-214AB (SMC) package facilitates efficient surface mounting, and it is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Qualification | AEC-Q101 |
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